Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications

博士 === 國立交通大學 === 材料科學與工程學系 === 99 === AlGaN/GaN heterostructure for the high electron mobility transistor applications were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on the sapphire substrates. The effects of AlN buffer growth parameters on the defect structure on GaN film were first...

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Main Authors: Wong, Yuen-Yee, 黃延儀
Other Authors: Chang, Edward Yi
Format: Others
Language:en_US
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/46131051372301340245
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spelling ndltd-TW-099NCTU51591782015-10-13T20:37:27Z http://ndltd.ncl.edu.tw/handle/46131051372301340245 Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications 以電漿輔助式分子束磊晶成長應用於高電子遷移率電晶體之氮化鋁鎵/氮化鎵異質結構 Wong, Yuen-Yee 黃延儀 博士 國立交通大學 材料科學與工程學系 99 AlGaN/GaN heterostructure for the high electron mobility transistor applications were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on the sapphire substrates. The effects of AlN buffer growth parameters on the defect structure on GaN film were first investigated. For GaN film grown on lower-temperature buffer, the density of screw threading dislocation (TD) was increased while the density of edge TD was decreased. The rough AlN surface helped to bend the growth direction of edge TDs and then reduced the dislocation density through recombination and annihilation processes. However, the screw TD was increased on the rough AlN buffer because this surface provided many nucleation centers for screw dislocation. Further examinations revealed that the edge TD was also closely related to the AlN buffer thickness which corresponding to the stress in GaN film. Total TD density could be minimized by optimizing the AlN buffer growth temperature and thickness. GaN buffer grown at Ga-lean condition was found useful to reduce the edge TD density in the GaN film significantly. The Ga-lean buffer, with inclined trench walls on its surface, provides an effectively way to bend the propagation direction and promotes the interaction of edge TDs in the GaN film. As a result, the edge TD density was reduced by approximately two orders of magnitude to 2x108 cm-2. The rough surface of Ga-lean buffer was recovered using migration enhanced epitaxy (MEE), a process of alternating deposition cycle of Ga atoms and N2 radicals, during the PA-MBE growth. By growing the Ga-lean GaN buffer on a smooth AlN buffer (achieved by high temperature), both the edge and screw TDs in the GaN film could be effectively reduced. Finally, the roles played by different types of TDs on the electrical properties of AlGaN/GaN heterostructure were studied. From the Hall measurement, the electron mobility in two-dimensional electron gas channel was mainly controlled by the edge TDs. The edge TD acted as Coulomb scattering centers inside the channel and reduced the carrier mobility and increased its resistance. On the other hand, from the Schottky barrier diode characterization, the screw TDs which acted at the current leakage path and was more deleterious to the gate reverse-bias leakage current of the AlGaN/GaN structure. As a result, the output current density and operating frequency of the HEMT devices were decreased by the edge TDs while the device breakdown voltage was degraded by the screw TDs. Therefore, for high performance HEMT device fabrication, both screw and edge TD densities in the AlGaN/GaN material have to be minimized. Chang, Edward Yi 張翼 2011 學位論文 ; thesis 87 en_US
collection NDLTD
language en_US
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description 博士 === 國立交通大學 === 材料科學與工程學系 === 99 === AlGaN/GaN heterostructure for the high electron mobility transistor applications were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on the sapphire substrates. The effects of AlN buffer growth parameters on the defect structure on GaN film were first investigated. For GaN film grown on lower-temperature buffer, the density of screw threading dislocation (TD) was increased while the density of edge TD was decreased. The rough AlN surface helped to bend the growth direction of edge TDs and then reduced the dislocation density through recombination and annihilation processes. However, the screw TD was increased on the rough AlN buffer because this surface provided many nucleation centers for screw dislocation. Further examinations revealed that the edge TD was also closely related to the AlN buffer thickness which corresponding to the stress in GaN film. Total TD density could be minimized by optimizing the AlN buffer growth temperature and thickness. GaN buffer grown at Ga-lean condition was found useful to reduce the edge TD density in the GaN film significantly. The Ga-lean buffer, with inclined trench walls on its surface, provides an effectively way to bend the propagation direction and promotes the interaction of edge TDs in the GaN film. As a result, the edge TD density was reduced by approximately two orders of magnitude to 2x108 cm-2. The rough surface of Ga-lean buffer was recovered using migration enhanced epitaxy (MEE), a process of alternating deposition cycle of Ga atoms and N2 radicals, during the PA-MBE growth. By growing the Ga-lean GaN buffer on a smooth AlN buffer (achieved by high temperature), both the edge and screw TDs in the GaN film could be effectively reduced. Finally, the roles played by different types of TDs on the electrical properties of AlGaN/GaN heterostructure were studied. From the Hall measurement, the electron mobility in two-dimensional electron gas channel was mainly controlled by the edge TDs. The edge TD acted as Coulomb scattering centers inside the channel and reduced the carrier mobility and increased its resistance. On the other hand, from the Schottky barrier diode characterization, the screw TDs which acted at the current leakage path and was more deleterious to the gate reverse-bias leakage current of the AlGaN/GaN structure. As a result, the output current density and operating frequency of the HEMT devices were decreased by the edge TDs while the device breakdown voltage was degraded by the screw TDs. Therefore, for high performance HEMT device fabrication, both screw and edge TD densities in the AlGaN/GaN material have to be minimized.
author2 Chang, Edward Yi
author_facet Chang, Edward Yi
Wong, Yuen-Yee
黃延儀
author Wong, Yuen-Yee
黃延儀
spellingShingle Wong, Yuen-Yee
黃延儀
Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications
author_sort Wong, Yuen-Yee
title Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications
title_short Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications
title_full Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications
title_fullStr Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications
title_full_unstemmed Epitaxial Growth of AlGaN/GaN Heterostructure by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications
title_sort epitaxial growth of algan/gan heterostructure by plasma-assisted molecular beam epitaxy for high electron mobility transistor applications
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/46131051372301340245
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