| Summary: | 碩士 === 國立交通大學 === 材料科學與工程學系 === 99 === Silicon Carbide (SiC) jointed with Kovar by partial transient liquid phase (PTLP) technique with titanium and nickel foils interlayer. This composite jointed with different temperature and time to discover the phase formation mechanisms. Using scanning electron microscope (SEM) and transmission electron microscope (TEM) analyzed the microstructure. The reaction layers of Ti/Ni interface are TiNi, TiNi3 and Ti2Ni. When the heat treatment temperature up to 1100℃ or annealing time to 6 h, the reaction layers turn to TiNi3 and TiNi. The reaction layers of Kovar/Ti interface are Fe2Ti, (Fe, Ni)Ti and (Ni, Fe)Ti2. When the heat treatment temperature rising up to 1100℃, the reaction layers turn to γ-(Fe, Ni), (Fe, Ni)Ti and (Ni, Fe)Ti2. The reaction layers of Ti/SiC interface is Ti3Si + TiC. When the heat treatment temperature rising up to 1200℃, the reaction layer turns to Ti2Ni3Si. When the annealing time rising to 6 h, the reaction layer turn to Ti5Si3.
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