Growth of semipolar GaN films on a-plane sapphire substrates with periodic line patterns
碩士 === 國立交通大學 === 材料科學與工程學系 === 99 === As generally recognized, built-in electric field will emerge along the polar c-axis of GaN epitaxial layers when growing the GaN base LEDs on a-、c-plane sapphire substrates. This may cause distortions of energy band gap, thereby decreases the recombination...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81317639689335708861 |