Modify Surface of dielectric layer on polymer thin-film transistors by atmospheric-pressure plasma technology

• Main Authors: Hung,Po-Cheng, 洪柏誠
• Other Authors: Chang Kow-Ming
• Format: Others
• Language: en_US
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/93850049071856951740

碩士 === 國立交通大學 === 電機學院電子與光電學程 === 99 === A procedure is using the spin coat way twists the organic thin film transistor can gain the advantage which is large area and lower cost in manufacturing. Because there is a close relations among the organic thin film transistor's potency, the semiconductor and the dielectric level's interface characteristic. Therefore the research objective of the study is to present the improvement characteristic of the organic thin film transistor by the affiliation control semiconductor and the dielectric level chemical characteristic. And because the silicon dioxide manufacture and the interface change the nature is easy, we choose the thermal oxidization, the silicon dioxide, to be our dielectric level. High regioregularity poly(3-hexylthiophene) has the high crystallization arrangement characteristic, will provide the thin transistor part high electronic mobility, therefore it is selected to be the part semiconductor level. Through hexamethyldisilazane (HMDS) the oxide layer interface which will process from the assembly level institute, the P3HT thin film transistor will obtain the distinct improvement. We will use the to atmospheric-pressure plasma technology (APPT) to realize interface processing. And atmospheric-pressure plasma technology (APPT) can be used under the atmospheric pressure, simultaneous regulation temperature below 120 ℃. May see these surface treatment from now on electrical specification in this article. Processing from now on threshold voltage may drop to the - 9 volts, field-effect mobility also to promote by original 1.9×10-3cm2/Vs to 2.62×10-2cm2/Vs. That can confirm the atmospheric pressure plasma system, can provide the low temperature, and the high efficiency's organic thin film transistor interface to change the nature system regulation.