Growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process

碩士 === 國立中興大學 === 材料科學與工程學系所 === 99 === We have synthesized tellurium nanotubes by a vapor transport process and carefully investigated the growth mechanism of tellurium nanotubes by examining their structural evolution during the synthesis process. The CO and NO2 gas sensing properties of the tellu...

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Main Authors: Sing-Lin Huang, 黃星霖
Other Authors: Yung-Chiun Her
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/3psmsy
id ndltd-TW-099NCHU5159032
record_format oai_dc
spelling ndltd-TW-099NCHU51590322018-04-10T17:21:05Z http://ndltd.ncl.edu.tw/handle/3psmsy Growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process 以氣相傳輸法合成碲奈米管狀結構及其成長機制與氣體感測之探討 Sing-Lin Huang 黃星霖 碩士 國立中興大學 材料科學與工程學系所 99 We have synthesized tellurium nanotubes by a vapor transport process and carefully investigated the growth mechanism of tellurium nanotubes by examining their structural evolution during the synthesis process. The CO and NO2 gas sensing properties of the tellurium nanotubes-based gas sensor devices were also measured. The tellurium nanotubes can be synthesized on Si substrates without using metal catalysts in a horizontal furnace. The optimum source and substrate temperatures were 560℃ and 110℃, respectively. The typical diameters of tellurium nanotubes were ~600 nm, the thickness of the tube walls were about 80~100 nm and the lengths were up to 10 um. The as-deposited products were confirmed to be single-crystalline trigonal Te with hexagonal cross-section grown along the [0001] direction. The growth mechanism of tellurium nanotubes can be divided into several steps. First, Te nanoparticles are nucleated on the Si substrate in the initial stage. Then these nanoparticles will gradually develop into the sheet-like structure (nanosheets) lying horizontally on the substrate. After these nanosheets cover the entire surface and they will stack with each other. Some of the nanosheets which have certain horizontal angles with respect to the substrate surface will begin to grow out of the substrate, and gradually develop into three-face screen-like nanostructures. As the Te source atoms are kept supplying, these three-face screen-like nanostructures will subsequently evolve to four-face and six-face groove-like nanostructures. Eventually, the six-face groove-like nanostructures will close the small gaps to grow into nanotubes. The gas sensor device fabricated by tellurium nanotubes exhibited the capabilities of detecting low-concentration CO and NO2 gases at room temperature. In addition, the CO and NO2 gases can be simultaneously detected by tellurium nanotubes based gas sensors. Therefore, tellurium nanotubes have a great potential for applications for CO and NO2 gas sensors. Yung-Chiun Her 何永鈞 2011 學位論文 ; thesis 51 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中興大學 === 材料科學與工程學系所 === 99 === We have synthesized tellurium nanotubes by a vapor transport process and carefully investigated the growth mechanism of tellurium nanotubes by examining their structural evolution during the synthesis process. The CO and NO2 gas sensing properties of the tellurium nanotubes-based gas sensor devices were also measured. The tellurium nanotubes can be synthesized on Si substrates without using metal catalysts in a horizontal furnace. The optimum source and substrate temperatures were 560℃ and 110℃, respectively. The typical diameters of tellurium nanotubes were ~600 nm, the thickness of the tube walls were about 80~100 nm and the lengths were up to 10 um. The as-deposited products were confirmed to be single-crystalline trigonal Te with hexagonal cross-section grown along the [0001] direction. The growth mechanism of tellurium nanotubes can be divided into several steps. First, Te nanoparticles are nucleated on the Si substrate in the initial stage. Then these nanoparticles will gradually develop into the sheet-like structure (nanosheets) lying horizontally on the substrate. After these nanosheets cover the entire surface and they will stack with each other. Some of the nanosheets which have certain horizontal angles with respect to the substrate surface will begin to grow out of the substrate, and gradually develop into three-face screen-like nanostructures. As the Te source atoms are kept supplying, these three-face screen-like nanostructures will subsequently evolve to four-face and six-face groove-like nanostructures. Eventually, the six-face groove-like nanostructures will close the small gaps to grow into nanotubes. The gas sensor device fabricated by tellurium nanotubes exhibited the capabilities of detecting low-concentration CO and NO2 gases at room temperature. In addition, the CO and NO2 gases can be simultaneously detected by tellurium nanotubes based gas sensors. Therefore, tellurium nanotubes have a great potential for applications for CO and NO2 gas sensors.
author2 Yung-Chiun Her
author_facet Yung-Chiun Her
Sing-Lin Huang
黃星霖
author Sing-Lin Huang
黃星霖
spellingShingle Sing-Lin Huang
黃星霖
Growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process
author_sort Sing-Lin Huang
title Growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process
title_short Growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process
title_full Growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process
title_fullStr Growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process
title_full_unstemmed Growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process
title_sort growth mechanism and gas sensing properties of tellurium nanotubes grown by vapor transport process
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/3psmsy
work_keys_str_mv AT singlinhuang growthmechanismandgassensingpropertiesoftelluriumnanotubesgrownbyvaportransportprocess
AT huángxīnglín growthmechanismandgassensingpropertiesoftelluriumnanotubesgrownbyvaportransportprocess
AT singlinhuang yǐqìxiāngchuánshūfǎhéchéngdìnàimǐguǎnzhuàngjiégòujíqíchéngzhǎngjīzhìyǔqìtǐgǎncèzhītàntǎo
AT huángxīnglín yǐqìxiāngchuánshūfǎhéchéngdìnàimǐguǎnzhuàngjiégòujíqíchéngzhǎngjīzhìyǔqìtǐgǎncèzhītàntǎo
_version_ 1718625807655501824