Effects of P addition on the Interfacial Structures and Electrical Properties of Ni Silicides
碩士 === 國立中興大學 === 材料科學與工程學系所 === 99 === As the dimensions of devices are reduced to the nanometer scale, flat shallow metal/Si electrical contacts must be formed in the source/drain regions of metal-oxide-semiconductor field-effect transistor (MOSFET) devices. This work demonstrates a method for the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79944912876452267164 |