Study on the Characteristic Simulation and Analysis of BaTiO3-Gate Ion-Sensitive Field Effect Transistor
碩士 === 嶺東科技大學 === 資訊科技應用研究所 === 99 === Ion-Sensitive Field Effect Transistor (ISFET) is better than ordinary ion selective electrodes, because it is smaller and faster and can be implemented in IC production. The structure of ISFET is similar to a standard MOSFET. The metal gate of MOSFET is replace...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00991755250702749228 |
| Summary: | 碩士 === 嶺東科技大學 === 資訊科技應用研究所 === 99 === Ion-Sensitive Field Effect Transistor (ISFET) is better than ordinary ion selective electrodes, because it is smaller and faster and can be implemented in IC production. The structure of ISFET is similar to a standard MOSFET. The metal gate of MOSFET is replaced by reference electrode/electrolyte/sensing insulator. Also, the elements are directly placed in pH buffer solution in order to change the potential on sensing insulator surface. The ion concentration in the solution can be detected with the change of potential.
This study is based on an amorphous barium titanate (a-BaTiO3) thin film as a H+ ion field-effect transistor gate sensing layer, and the EIS and ISFET system mathematical model is created by Mathematica software. The surface voltage difference curves and capacitance-voltage characteristics are simulated on EIS structure. The current-voltage characteristics and gate-voltage curves also are simulated on ISFET device. The theoretical characteristics of the BaTiO3-gate ISFET device are understood.
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