Study on the Properties of (100) Oriented ZnO Thin Film and Application of Bulk Acoustic Wave Resonator

• Main Authors: Meng-Fang Ting, 丁盟芳
• Other Authors: Sean Wu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/43764006640442763805

碩士 === 國立高雄應用科技大學 === 電子工程系 === 99 === In this study , we deposited (100)-oriented ZnO film by reactive RF magnetron sputtering method , and apply ZnO film to fabricate thin film bulk acoustic resonator (FBAR). The structure of FBAR were prepared by DC sputtering , reactive RF magnetron sputtering , plasma enhanced chemical vapor deposition(PECVD) and inductively coupled plasma(ICP) methods. In this experiment , the characteristics of ZnO films such as crystalline orientation and micro-structure were analyzed by X-ray diffraction and scanning electron microscope respectively. The resonance frequency of FBAR device was measured by network analyzer. Finally , the optimal sputtering parameters for (100)-oriented ZnO films were found to be RF power of 200W , sputtering pressure of 11.5 mTorr , substrate temperature of 150 oC , oxygen concentration of 20% , and the resonance frequency and electromechanical coupling coefficient of the FBAR device are 1.45 GHz and 6.12% , respectively.