Investigation of Si-based thin films on their resistive memory properties
碩士 === 國立高雄應用科技大學 === 電子工程系 === 99 === Abstract In this thesis, SiO2 and Si3N4 thin films were deposited on Pt/Ti/SiO2/Si substrates by a radio-frequency magnetron sputter and high density plasma chemical vapor deposition (HDPCVD), respectively. Then, Cu/SiO2/Pt and Cu/Si3N4/Pt structures were fabri...
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| Format: | Others |
| Language: | zh-TW |
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05159395276062662881 |
| Summary: | 碩士 === 國立高雄應用科技大學 === 電子工程系 === 99 === Abstract
In this thesis, SiO2 and Si3N4 thin films were deposited on Pt/Ti/SiO2/Si substrates by a radio-frequency magnetron sputter and high density plasma chemical vapor deposition (HDPCVD), respectively. Then, Cu/SiO2/Pt and Cu/Si3N4/Pt structures were fabricated to investigate the resistive switching behaviors. Current-voltage characteristics were recorded by dc voltage sweeping with HP 4155B-SPA at room temperature. Material analysis and electrical measurements were used to investigate resistive switching behavior such as switching mechanism, retention, and temperature dependence. The resistive switching behavior can be explained by the conducting filament model with an electrochemical reaction.
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