Junction characteristics of Ag contact on GaSb

碩士 === 崑山科技大學 === 電子工程研究所 === 99 === The contact characteristics of the Ag/n-GaSb diode were discussed in the paper. As the diode was prepared, it was annealed by rapid thermal annealing system at various of temperature. A best diode characteristic was obtained at 350 ˚C for 45 sec and showed a satu...

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Bibliographic Details
Main Authors: Che-Wei Liu, 劉哲維
Other Authors: 黃文昌
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/44067658475376881027

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