Investigation of Microwave Dielectric Properties of Doped Zn0.5Ti0.5NbO4 and ZnTiO3 Ceramics by Reaction-Sintering Process
碩士 === 崑山科技大學 === 電子工程研究所 === 99 === In this paper, phase formation, microstructure and microwave dielectric properties of doped Zn0.5Ti0.5NbO4 and ZnTiO3 ceramics by the reaction-sintering process were investigated. The main phase ZnTiNb2O8 accompanied by second phase CaNb2O6 formed in ZTN-CT (0.95...
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ndltd-TW-099KSUT54280092015-10-13T20:18:51Z http://ndltd.ncl.edu.tw/handle/12208975854255781081 Investigation of Microwave Dielectric Properties of Doped Zn0.5Ti0.5NbO4 and ZnTiO3 Ceramics by Reaction-Sintering Process 以反應燒結法製備摻雜添加物之Zn0.5Ti0.5NbO4及ZnTiO3陶瓷微波介電特性研究 Wei-Ting Li 李威廷 碩士 崑山科技大學 電子工程研究所 99 In this paper, phase formation, microstructure and microwave dielectric properties of doped Zn0.5Ti0.5NbO4 and ZnTiO3 ceramics by the reaction-sintering process were investigated. The main phase ZnTiNb2O8 accompanied by second phase CaNb2O6 formed in ZTN-CT (0.95Zn0.5Ti0.5NbO4-0.05CaTiO3) ceramic. The optimum density and shrinkage were 5.21 g/cm3 and 18.74%, respectively. εr=29.2, Q×f≒ 10,770GHz, τf ≒-33.76 ppm/oC were found for 1100oC/4h sintering ZTN-CT. The main phase with a same structure of ZnTiNb2O8 formed in ZNTN ((Zn0.8Ni0.2)0.5Ti0.5NbO4) ceramic. Second phase Ni0.5Ti0.5NbO4 formed in ZNTN especially when sintering temperature increased. The optimum density and shrinkage were 5.29 g/cm3 and 17.37%, respectively. εr=38.58, Q×f≒16,544GHz, τf≒-4.52 ppm/oC were obtained for 1150oC/2h sintering ZNTN. The main phaseα-Zn2TiO4 accompanied by TiO2 (rutile) formed in ZT (ZnTiO3) ceramic. The optimum density and shrinkage were 4.96 g/cm3 and 16.04%, respectively. εr=29.38, Q×f≒20,113GHz, τf ≒+31.42 ppm/oC were obtained for 1250oC/6h sintering ZT. The main phase similar to α-Zn2TiO4 accompanied by TiO2 (rutile) formed in ZMT (Zn0.93Mg0.07TiO3) ceramic. The optimum density and shrinkage were 4.91 g/cm3 and 15.99%, respectively. εr=28.92, Q×f≒20,314GHz, τf ≒+35.22 ppm/oC were obtained for 1150oC/6h sintering ZMT. Yi-Cheng Liou 劉依政 2011 學位論文 ; thesis 115 zh-TW |
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碩士 === 崑山科技大學 === 電子工程研究所 === 99 === In this paper, phase formation, microstructure and microwave dielectric properties of doped Zn0.5Ti0.5NbO4 and ZnTiO3 ceramics by the reaction-sintering process were investigated. The main phase ZnTiNb2O8 accompanied by second phase CaNb2O6 formed in ZTN-CT (0.95Zn0.5Ti0.5NbO4-0.05CaTiO3) ceramic. The optimum density and shrinkage were 5.21 g/cm3 and 18.74%, respectively. εr=29.2, Q×f≒ 10,770GHz, τf ≒-33.76 ppm/oC were found for 1100oC/4h sintering ZTN-CT. The main phase with a same structure of ZnTiNb2O8 formed in ZNTN ((Zn0.8Ni0.2)0.5Ti0.5NbO4) ceramic. Second phase Ni0.5Ti0.5NbO4 formed in ZNTN especially when sintering temperature increased. The optimum density and shrinkage were 5.29 g/cm3 and 17.37%, respectively. εr=38.58, Q×f≒16,544GHz, τf≒-4.52 ppm/oC were obtained for 1150oC/2h sintering ZNTN. The main phaseα-Zn2TiO4 accompanied by TiO2 (rutile) formed in ZT (ZnTiO3) ceramic. The optimum density and shrinkage were 4.96 g/cm3 and 16.04%, respectively. εr=29.38, Q×f≒20,113GHz, τf ≒+31.42 ppm/oC were obtained for 1250oC/6h sintering ZT. The main phase similar to α-Zn2TiO4 accompanied by TiO2 (rutile) formed in ZMT (Zn0.93Mg0.07TiO3) ceramic. The optimum density and shrinkage were 4.91 g/cm3 and 15.99%, respectively. εr=28.92, Q×f≒20,314GHz, τf ≒+35.22 ppm/oC were obtained for 1150oC/6h sintering ZMT.
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author2 |
Yi-Cheng Liou |
author_facet |
Yi-Cheng Liou Wei-Ting Li 李威廷 |
author |
Wei-Ting Li 李威廷 |
spellingShingle |
Wei-Ting Li 李威廷 Investigation of Microwave Dielectric Properties of Doped Zn0.5Ti0.5NbO4 and ZnTiO3 Ceramics by Reaction-Sintering Process |
author_sort |
Wei-Ting Li |
title |
Investigation of Microwave Dielectric Properties of Doped Zn0.5Ti0.5NbO4 and ZnTiO3 Ceramics by Reaction-Sintering Process |
title_short |
Investigation of Microwave Dielectric Properties of Doped Zn0.5Ti0.5NbO4 and ZnTiO3 Ceramics by Reaction-Sintering Process |
title_full |
Investigation of Microwave Dielectric Properties of Doped Zn0.5Ti0.5NbO4 and ZnTiO3 Ceramics by Reaction-Sintering Process |
title_fullStr |
Investigation of Microwave Dielectric Properties of Doped Zn0.5Ti0.5NbO4 and ZnTiO3 Ceramics by Reaction-Sintering Process |
title_full_unstemmed |
Investigation of Microwave Dielectric Properties of Doped Zn0.5Ti0.5NbO4 and ZnTiO3 Ceramics by Reaction-Sintering Process |
title_sort |
investigation of microwave dielectric properties of doped zn0.5ti0.5nbo4 and zntio3 ceramics by reaction-sintering process |
publishDate |
2011 |
url |
http://ndltd.ncl.edu.tw/handle/12208975854255781081 |
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