The preparation of ZnO thin film and its diode application

• Main Authors: Jhen-lung Chen, 陳振龍
• Other Authors: Wen-Chang Huang
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/27233769868618318462

碩士 === 崑山科技大學 === 光電工程研究所 === 99 === An ZnO thin film prepared by sol gel method was discussed in the paper. The film quality included crystalline, surface morphology and optical characteristics were observed after the annealed ranged from 500 to 900 ?aC. It is found that the films showed preferential growth of c-axial ZnO (002) orientation and a best film quality was observed after 900 ?aC annealing. An ZnO nanowire was also prepared by using ZnO thin film as seed layer through Hydrothermal. It is found a length of 2.906 µm and width of 0.630 µm ZnO nanowire was growth in the unannealed sample, and it was grown with a length of 2.906 µm and a width of 0.630 µm after 700 ?aC annealing. The undoped ZnO thin film was applied to as barrier layer of the Ag/ZnO/n-InP Schottky diode. It showed a barrier height of 0.66 eV with an ideality of 1.47. The barrier height is higher than that of conventional Ag/n-InP Schottky diode.