Heterostructure Solar Cell by Pulse Laser Deposition Technology

• Main Authors: Chien-Lung Chang, 張簡建隆
• Other Authors: 王納富
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/06982845656254858773

碩士 === 正修科技大學 === 電子工程研究所 === 99 === In this study, we proves low cost Al and Y codoped ZnO (AZOY) material is a suitable window layer for silicon-base heterojunction solar cell application. The mainly investigation in this study will divided three parts. Firstly, the discuss respect to the properties of AZOY thin films (varying partial oxygen pressure from vacuum to 20 mTorr and substrate temperature from 100 oC to 500 oC) deposited on glass substrate by pulsed laser deposition (PLD) technology. According to the results of experiments, the AZOY thin films deposited at partial oxygen pressures of 15 mTorr (varying partial oxygen pressure) and substrate temperatures of 400 oC (varying substrate temperature) showed the best optoelectrical properties, respectively. The best quality of AZOY thin films showed high average visible transmittance > 80% with glass substrate, the lowest resistivity of 2.84×10-4 Ω-cm, the highest mobility of 27.5 cm2/Vs, and the highest carrier concentration of 7.97×1020 cm-3. The second and third parts investigate respect to the influence of conversion efficiency of AZOY/n-Si heterojunction solar cell by AZOY deposited at different partial oxygen pressure, substrate temperature, and film thickness. The AZOY thin film deposited on n-Si substrate (AZOY/n-Si) at partial oxygen pressure of 15 mTorr, substrate temperature of 400 oC, and thickness of 380 nm showed highest conversion efficiency of 3.93% (JSC of 31.43 mA/cm2, VOC of 0.24 V, and FF of 0.51)