Influence of mixed CF4/O2 plasma treatment on resistance switching in the Ni/HfOx/Ni resistive random access memory device
碩士 === 中華大學 === 電機工程學系碩士班 === 99 === Due to the popularity of digital equipment, nonvolatile memory (NVM) plays an important role in our life, flash memory is the mainstream among the NVM nowadays, but several challenge emerge, such as high operation voltage, scaling problem and low operation sp...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/93457427528029619061 |