| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 99 === In recent years, floating gate memory has been widely used on another nonvolatile memory. However, for conventional floating gate memory, the current face to several major shortcomings. However, for conventional floating gate memory, the current face several significant shortcomings need to overcome issues such as the operating voltage is too high, the data storage time is too short, the size of the miniature. Recently, nanocrystal (NC) memory with discrete nodes has been published widely sue to the potential scalability compared to the traditional floating gate (FG) Flash memory.
In this paper, we developed the use of high-k metal oxide layer to replace the traditional single layer of tunneling oxide layer has been published in the nano-crystalline gadolinium oxide on the memory. Can quickly increase the nano-crystalline gadolinium oxide memory memory window and the speed of electronic writing, and to achieve a more rapid removal of electronic and electrical properties in the same thickness, physical thickness will increase, making the data storage the time can be stretched back many. This paper for future study of non-volatile memory, which can be a good reference for research
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