Fabrication and characterization of resonant-cavity light emitting diodes for white lighting
碩士 === 長庚大學 === 電子工程學系 === 99 === Due to the large difference in refractive index between GaN material and air, most of light cannot escape from the semiconductor and gradually be absorbed within InGaN light-emitting diode (LED). To fabricate the RC-LEDs in this study, the thickness of the sapphire...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
2011
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/51814484964211592736 |