Analysis of surface potential in high-voltage field effect transistors
碩士 === 長庚大學 === 電子工程學系 === 99 === High-voltage metal oxide semiconductor field effect transistors (High-voltage MOSFETs) are widely used in integrated power circuits. Surface potential can be used to describe the device phenomenon precisely. Therefore, modeling of surface potential is essential when...
Main Authors: | Yeh Wei Wu, 吳葉偉 |
---|---|
Other Authors: | R. D. Chang |
Format: | Others |
Published: |
2011
|
Online Access: | http://ndltd.ncl.edu.tw/handle/92330020201330396115 |
Similar Items
-
Scalable Surface-Potential-Based Compact Model of High-Voltage LDMOS Transistors
Published: (2012) -
Enhancement of the ESD Robustness for High-Voltage Lateral-Diffusion MOS Field-Effect Transistors by Layout
by: Wu,Cheng-Hsu, et al.
Published: (2016) -
Failure Analysis of Threshold Voltage Shift of High-Voltage Metal-Oxide-Semiconductor Field –Effect Transistors
by: Huang, Ho-Hua, et al.
Published: (2013) -
Dynamic ON-resistance in high voltage GaN field-effect-transistors
by: Jin, Donghyun
Published: (2014) -
Characteristics and Reliability of n-channel High-Voltage Transistors
by: wei-chin Huang, et al.
Published: (2007)