Analysis of surface potential in high-voltage field effect transistors
碩士 === 長庚大學 === 電子工程學系 === 99 === High-voltage metal oxide semiconductor field effect transistors (High-voltage MOSFETs) are widely used in integrated power circuits. Surface potential can be used to describe the device phenomenon precisely. Therefore, modeling of surface potential is essential when...
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2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92330020201330396115 |
| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 99 === High-voltage metal oxide semiconductor field effect transistors (High-voltage MOSFETs) are widely used in integrated power circuits. Surface potential can be used to describe the device phenomenon precisely. Therefore, modeling of surface potential is essential when compact models of devices need to be generated for circuit simulation. This thesis focuses on the characteristics of surface potential in high-voltage MOSFETs. Two equations were derived to describe the potential distribution in high-voltage MOSFETs. One equation is obtained by solving the quasi-2D Poisson equation with the assumption of carrier distribution. Another equation is to describe the change of built-in potential in the junction of the channel and drift region with quasi-saturation occurs.
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