The Preparation of Copper Indium Gallium Diselenide (CuInxGa1-xSe2) Photo Absorber Layers using Co-evaporation for Photovoltaic Application

• Main Authors: Han Chung Lai, 賴漢中
• Other Authors: K. W. Cheng
• Format: Others
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/31237979252295865697

碩士 === 長庚大學 === 化工與材料工程學系 === 99 === In this study, the Cu-In-Ga-Se (CIGS) semiconductor thin films were deposited on glass substrates and indium-tin-oxide (ITO) coated glass substrates using selenization of co-evaporated Cu-In-Ga metal alloys . The effect of the Cu/(In+Ga) and Ga /(In+Ga) molar ratio in Cu-In-Ga metal alloys on the structural, optical and electrical properties of CIGS thin film were investigated. X-ray diffraction pattern of samples ( XRD ) revealed that samples in this study were chalcopyrite CIGS phase. Energy dispersive analysis of X-ray ( EDAX ) showed that compositions of CuIn 1-x Ga x Se 2 thin film were the function of the Cu-In-Ga molar ratio in metal alloys. The thickness of samples were in the range of 1.8 ~ 4 µm. The direct energy band gap of samples varied from 1.28~ 1.50 eV, depending on Cu/(In+Ga) and Ga/(In+Ga) molar ratios in samples. Maximum photocurrent density of samples reached to 0.24 mA/cm 2 in the solution containing S 2- and SO 3 2- ions. The carrier concentration of samples varied from 2.86 × 10 18 ~ 3.82 × 10 12 cm -3 using Hall measurement. The resistivity of samples decreased with an increase in Cu/(In+Ga) molar ratio in samples. The conduction type of CuIn 1-x Ga x Se 2 thin films are all p-type. Glass/Mo/CIGS/CdS/IZO/AZO/Ag solar cell gaved V OC of 0.238 V, J SC of 0.134 mA/cm 2 , FF of 0.220, and conversion efficiency of 0.01 %.