| Summary: | 碩士 === 長庚大學 === 化工與材料工程學系 === 99 === In this study, the Cu-In-Ga-Se (CIGS) semiconductor
thin films were deposited on glass substrates and
indium-tin-oxide (ITO) coated glass substrates using
selenization of co-evaporated Cu-In-Ga metal alloys . The
effect of the Cu/(In+Ga) and Ga /(In+Ga) molar ratio in
Cu-In-Ga metal alloys on the structural, optical and
electrical properties of CIGS thin film were investigated.
X-ray diffraction pattern of samples ( XRD ) revealed
that samples in this study were chalcopyrite CIGS phase.
Energy dispersive analysis of X-ray ( EDAX ) showed that
compositions of CuIn 1-x Ga x Se 2 thin film were the function
of the Cu-In-Ga molar ratio in metal alloys. The
thickness of samples were in the range of 1.8 ~ 4 µm. The
direct energy band gap of samples varied from 1.28~ 1.50
eV, depending on Cu/(In+Ga) and Ga/(In+Ga) molar ratios
in samples. Maximum photocurrent density of samples
reached to 0.24 mA/cm
2
in the solution containing S
2-
and SO 3
2-
ions. The carrier concentration of samples varied
from 2.86 × 10
18
~ 3.82 × 10
12
cm
-3
using Hall measurement.
The resistivity of samples decreased with an increase in
Cu/(In+Ga) molar ratio in samples. The conduction type of
CuIn 1-x Ga x Se 2 thin films are all p-type.
Glass/Mo/CIGS/CdS/IZO/AZO/Ag solar cell gaved V OC
of 0.238 V, J SC of 0.134 mA/cm
2
, FF of 0.220, and
conversion efficiency of 0.01 %.
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