Fabrication and Characterization of Yttrium-doped Indium Oxide Transparent Conductive Thin-Film Transistor

• Main Authors: Tsai, Mengkunn, 蔡孟錕
• Other Authors: Ting, Chuchi
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/37095835249292732085

碩士 === 國立中正大學 === 光機電整合工程研究所 === 99 === This paper prepared by solution with Yttrium doped indium oxide as the transparent conductive thin film. Change the various mole ratio of yttrium as the active layer of thin-film transistors. It used mainly by the electronegativity difference of Y and O is greater than In and O, to reduce the oxygen vacancy generation and concentration, suitable for thin film transistor. GIXRD observation crystal of YIO thin films, and can calculate the grain size about 10nm size. You can use SEM AFM observations of its surface morphology, hall measurement YIO hall mobility, resistivity and carrier concentration. XPS verified that the vacancy-related oxygen decreased with increasing of Y. It can confirm that YIO transparent thin films can be made into a good transistor active layer. The optimum YIO TFT occurred at a YIO mole ratio of 0.12:1 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 1.43 cm2/Vs, 6.69V, 2.33 V/decade, and ~105, respectively.