Study on Buckling Behavior of Ultra Thin Wafer Under BOR Test
碩士 === 國立中正大學 === 機械工程學系暨研究所 === 99 === The buckling behaviors of ultra-thin wafers under BOR (Ball On Ring) tests are investigated based on experimental observations and finite element analyses. Specimens with a length of 15mm, a width of 15 mm, and two thicknesses of 25 and 50 μm are used. The e...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22323305268074884430 |
| Summary: | 碩士 === 國立中正大學 === 機械工程學系暨研究所 === 99 === The buckling behaviors of ultra-thin wafers under BOR (Ball On Ring) tests are investigated based on experimental observations and finite element analyses. Specimens with a length of 15mm, a width of 15 mm, and two thicknesses of 25 and 50 μm are used. The experimental results indicate that the buckling behaviors can be observed in 70% of 25 μm wafers but none of 50μm wafers. Linear-elastic anisotropic three-dimensional finite element models are developed to study how the wafer location and the wafer thickness affect the buckling mechanism of ultra-thin wafers. The results indicate that the deviation of the wafer location has significant effects on the bucking behaviors. Comparing the experimental and numerical results, the critical wafer thickness for bucking is nearly 35μm and the traditional BOR test appear to be available for the wafer thickness of 40μm. Finally, considerations of the sheet metal forming process, adding an upper holder can successfully prevent the buckling behaviors of ultra-thin wafers during BOR tests to obtain accurate wafer strengths.
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