| Summary: | 碩士 === 國立中正大學 === 電機工程研究所 === 99 === K-band and V-band CMOS 180° and 360° phase shifters are presented in this thesis, which will be applied to millimeter-wave beam-steering phased-array systems. To achieve a full 360° tuning range, a novel differential phase shifter configuration with switchable phase inversion is proposed such that only half of the phase range is required. Therefore, the proposed differential phase shifter configuration contains two key circuit blocks, which are 180° differential reflection-type phase shifter (DRTPS) and switchable active phase inverter. First, the 180° differential reflection-type phase shifters (DRTPSs) were designed at the K- and V-band in 180 nm and 90 nm CMOS process, respectively. The strong coupling lines are utilized to realize the quadrature hybrid. Thus the insertion loss is lowered and the hybrid chip size is reduced. The K-band CMOS DRTPS has the measured insertion loss of 4.9±1.1 dB from 22 to 25 GHz and its chip area is 0.11 mm2. The V-band CMOS DRTPS has the insertion loss of 5.9±0.6 dB from 50 to 60 GHz with the 0.1 mm2 chip area.
Second, the above 180° DRTPS is integrated with the switchable active phase inverter. The switchable active phase inverter is a differential low-noise amplifier with switch-controlled interconnection to output ports. Consequently the phase of output signal at one state can be switched to 180° lag to another state. Two 360° active phase shifters at K- and V-band were implemented. The K-band active phase shifter has a measured gain of 12±2 dB, noise figure of 5.5±0.5 dB from 22 to 25 GHz. The DC power consumption is 20.3 mW and the chip area of 0.72 mm2. The V-band 360° active phase shifter has a measured gain of 17.6±1 dB and noise figure of 5.7±0.2 dB from 5 0 to 60 GHz. It draws 32 mW DC power and has a 0.59 mm2 chip area. The measured results agree very well with the simulation, which demonstrate the proposed full 360° phase shifter configuration.
|
|---|
