| Summary: | 碩士 === 國防大學理工學院 === 光電工程碩士班 === 99 === In this thesis, vertically stacked structure pixels combined with interlacemode achieves dual-band quantum well infrared detector elements, where it improvesthe shortcomings existing pixels on the process design, mask and components in the production of long-wavelength grating , the mask paste with the components and the gap between high and low when the shortcomings of this study, it improves the shortcomings of hight differences between mid- and long wavelength QWIP structure rusuiting in focusing on optical grating when the interlaced QWIPs are fabriouted. The study uses metal covered with the edge of Mid-wavelength QWIP to achieve the same height of dual-band QWIP, output Dual-band response and decrease device darkcurrent from surface and edge of QWIP. By proposed revised process.We improve the performance of interlanced dual-band QWIP. Where,it results in eages-undercuting and higher darkcurrent in our laboratory last year.
Because the normal incident TE mode infrared light can not be adsorbed, the two-dimensioual optical grating must be used to deflect the incident light. The research is proposed a better parameters of two-dimensioual optical grating to apply the interlaced dual-band QWIPs.
Using Comsol Multi-physics 3.5a simulator (fimite element method) combined with Schrodinger wave-equation, band-gap engineering in strained effect to optimize the period numbers, Al and In mole ratio of quantum well, QWIP stracture will be proposed efficiently and quickly.
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