Design and implement of a high-performance CMOS charge pump

碩士 === 雲林科技大學 === 電子與資訊工程研究所 === 98 === As the CMOS technology advances integrated circuits are becoming smaller and the power supply voltage is becoming lower. However, circuits for system-on-chip still need to be operated with high voltages . Thus CMOS charge pump circuit are becoming more and mor...

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Main Authors: Jun-Yi Liu, 劉俊益
Other Authors: none
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/35012383914430488361
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spelling ndltd-TW-098YUNT53930162015-10-13T18:58:57Z http://ndltd.ncl.edu.tw/handle/35012383914430488361 Design and implement of a high-performance CMOS charge pump 高性能CMOS電荷幫浦設計與實現 Jun-Yi Liu 劉俊益 碩士 雲林科技大學 電子與資訊工程研究所 98 As the CMOS technology advances integrated circuits are becoming smaller and the power supply voltage is becoming lower. However, circuits for system-on-chip still need to be operated with high voltages . Thus CMOS charge pump circuit are becoming more and more important. Thus, design and implementation of a high-performance CMOS charge pump is describled. The charge pump exploits an automatic pumping control scheme to provide small output ripple voltage. The automatic pumping control scheme is composed of two schemes, an automatic pumping current control scheme and an improved automatic pumping frequency control scheme. A Range-programmable Voltage-controlled Oscillator is adopted. Depending on the magnitude of load current , The range-programmable Voltage-controlled Oscillator generates four different frequency band outputs. The output frequency ranges of the VCO ranges from 900kHz to 9MHz. The improved automatic pumping frequency control scheme generates high pumping frequency when the outputs load current is large. The test circuit is designed using a TSMC 0.18um CMOS technology to design, and operates with a 3.3V power supply. none 陳育鑽 2010 學位論文 ; thesis 74 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 雲林科技大學 === 電子與資訊工程研究所 === 98 === As the CMOS technology advances integrated circuits are becoming smaller and the power supply voltage is becoming lower. However, circuits for system-on-chip still need to be operated with high voltages . Thus CMOS charge pump circuit are becoming more and more important. Thus, design and implementation of a high-performance CMOS charge pump is describled. The charge pump exploits an automatic pumping control scheme to provide small output ripple voltage. The automatic pumping control scheme is composed of two schemes, an automatic pumping current control scheme and an improved automatic pumping frequency control scheme. A Range-programmable Voltage-controlled Oscillator is adopted. Depending on the magnitude of load current , The range-programmable Voltage-controlled Oscillator generates four different frequency band outputs. The output frequency ranges of the VCO ranges from 900kHz to 9MHz. The improved automatic pumping frequency control scheme generates high pumping frequency when the outputs load current is large. The test circuit is designed using a TSMC 0.18um CMOS technology to design, and operates with a 3.3V power supply.
author2 none
author_facet none
Jun-Yi Liu
劉俊益
author Jun-Yi Liu
劉俊益
spellingShingle Jun-Yi Liu
劉俊益
Design and implement of a high-performance CMOS charge pump
author_sort Jun-Yi Liu
title Design and implement of a high-performance CMOS charge pump
title_short Design and implement of a high-performance CMOS charge pump
title_full Design and implement of a high-performance CMOS charge pump
title_fullStr Design and implement of a high-performance CMOS charge pump
title_full_unstemmed Design and implement of a high-performance CMOS charge pump
title_sort design and implement of a high-performance cmos charge pump
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/35012383914430488361
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AT liújùnyì gāoxìngnéngcmosdiànhébāngpǔshèjìyǔshíxiàn
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