| Summary: | 碩士 === 雲林科技大學 === 材料科技研究所 === 98 === In this study, large scale, high density and quasi aligned Al-doped ZnO nanowires were successfully prepared on Si/SiO2 substrates pre-coated with AZO thin film seed layers by hydrothermal method. Parameters for the preparation of AZO thin film and effects of thickness of AZO on the growth and features of ZnO nanawires, effects of concentration of precursor, duration, and solution pH on zinc oxide nanawire arrays, preparation of Al-doped ZnO nanawires, and effects of various parameters on the growth rate of zinc oxide nanawires, were studied.
It was found that thickness of AZO has an effect on the diameter of ZnO nanawires. This is possibly explained by the number of nucleus-like particles formed on the film. This makes it possible to control the diameter of ZnO nanawires. It was also found that the annealed AZO film has a C axis preferred orientation greater than that of unannealed one. This would be helpful for ZnO nanawires to grow in the C axis preferred orientation.
Needle-shaped ZnO nanawires with different features were prepared under different concentrations and cooling modes. Their preparations were based on their different growth rates on planes of crystal.
There have been few papers using the hydrothermal method to prepare the Al-doped ZnO nanawires. This paper will show how to prepare Al-doped ZnO nanawires by a hydrothermal method at low temperature and cost, in which the dose of doped Al can be under control.
Growth rates and lengths of various Al-doped ZnO nanawires were calculated according to statistical method. Therefore, the optimal parameters for preparing nn+ junction could be established by controlling the length and features of nanawires.
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