| Summary: | 碩士 === 雲林科技大學 === 材料科技研究所 === 98 === In this study, the CuInGaSe 2 is prepared by electrodeposition. First of all,
Cu is electrodeposited onto stainless steel and to find out the best condition to
deposit Cu by changing different parameters. Second, Indium and Gallium
were electrodeposited by using Orthogonal array of L 18 . Final, that the
In/Cu/S.S. and In/Ga/Cu/S.S be selenized, and the selenized condition is heated
at 500℃ for 1hour in Argon atmosphere. The CIGS should be characterized by
XRD, FE-SEM and EDS.
The results show the best parameters for the electrodeposition of Cu/In
layer by Taguchi method (current : 25mA, pH : 11, InCl 3 solution: 150mM and
KNaC 4 H 4 O 6．4H 2 O solution: 1M and the deposition time is 30 minutes.) The
results show the best parameters for the electrodeposition of Cu/Ga layer by
Taguchi method (current : 60mA, pH : 11.5, GaCl 3 solution : 75mM and
C 6 H 5 Na 3 O 7 solution : 1M and the deposition time is 40 minutes.)
After selenided, by using XRD, CIS phase has be found in In/Cu/S.S. and
CGS phase has be found in In/Ga/Cu/S.S.. After EDS analysis, the content of
In in In/Ga/Cu/S.S. is too low to make it to be CIGS.
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