| Summary: | 碩士 === 雲林科技大學 === 光學電子工程研究所 === 98 === In this research, effect of CL-PVP insulator layer modified by PHEMA thin film fabricated on Pentacene OTFTs is studied. Fabrication of all solution-processable organic thin-film transistors provides benefits of simple process and low cost. However, the electrical characteristics of mobility and on-off ratio on OTFT devices are influenced by insulator thin films formed between PHEMA and CL-PVP. On fabricating CL-PVP insulator layer, various PMF concentrations and channel lengths are the process conditions. The mobility of 0.41 cm2V-1s-1, as PMF is 2.5 wt. % and channel length is 200 μm, on/off current ratio of 1×105 and channel resistance of 1.124 MΩ are achieved. After CL-PVP thin film modified by PHEMA 5 wt. %, saturation current is lifted by 3.836 and mobility is lifted by 2.632, respectively, when baking condition is 100℃/10 min.
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