Nonideal Effects in Equivalent Circuit Model of InGaAsSb Heterojunction Bipolar Transistors
碩士 === 雲林科技大學 === 光學電子工程研究所 === 98 === In this thesis, the DC parameters in InAlAs/InGaAsSb DHBT are extracted to the VBIC mode . The DC model without non-ideal effect is built first, and then non-ideal effects are considered later. The InAlAs/InGaAsSb DHBT has advantages including low VCE offset vo...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/80120547642713909446 |
| Summary: | 碩士 === 雲林科技大學 === 光學電子工程研究所 === 98 === In this thesis, the DC parameters in InAlAs/InGaAsSb DHBT are extracted to the VBIC mode . The DC model without non-ideal effect is built first, and then non-ideal effects are considered later.
The InAlAs/InGaAsSb DHBT has advantages including low VCE offset voltage, high current density, and reduction of the loss of the power and increase in the efficiency at the same time.
The DC characterization and several non-ideal effects in an InGaAsSb double heterojunction bipolar transistors are extracted to VBIC equivalent circuit . Extraction of parameters is verified by the Medici device simulator, where the device physics is considered to achieve accuracy of the simulation.
|
|---|