The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors

碩士 === 大同大學 === 光電工程研究所 === 98 === In this study, we deposited pad-silicon, incubation-silicon, and microcrystalline-silicon in proper order in situ using PECVD. Then we used three-layers microcrystalline silicon (μc-Si) film as active-layer of bottom-gate TFTs at a very low temperature (~200℃). Thi...

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Main Authors:	Yao-Chang Tsai, 蔡耀昌
Other Authors:	Chiung-wei Lin
Format:	Others
Language:	en_US
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/81939691447580776798

id	ndltd-TW-098TTU05124021
record_format	oai_dc
spelling	ndltd-TW-098TTU051240212016-04-22T04:23:29Z http://ndltd.ncl.edu.tw/handle/81939691447580776798 The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors 低溫微晶矽薄膜電晶體開發 Yao-Chang Tsai 蔡耀昌碩士大同大學光電工程研究所 98 In this study, we deposited pad-silicon, incubation-silicon, and microcrystalline-silicon in proper order in situ using PECVD. Then we used three-layers microcrystalline silicon (μc-Si) film as active-layer of bottom-gate TFTs at a very low temperature (~200℃). This method can solve the problem of hydrogen ion bombardment when depositing active-layer on top of insulator. According to results, excessive flow rate of hydrogen when depositing thin films will form a lot of defects such as fine grains and voids in the films. The highest crystallization fraction of 69 % can be achieved, which was higher than industry standard 60%. The field effect mobility, ON/OFF ratio of proposed μc-Si thin-film transistor (TFT) were 0.98 cm2/V.s, 2.62?~107, respectively. Chiung-wei Lin 林烱暐 2010 學位論文 ; thesis 61 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 大同大學 === 光電工程研究所 === 98 === In this study, we deposited pad-silicon, incubation-silicon, and microcrystalline-silicon in proper order in situ using PECVD. Then we used three-layers microcrystalline silicon (μc-Si) film as active-layer of bottom-gate TFTs at a very low temperature (~200℃). This method can solve the problem of hydrogen ion bombardment when depositing active-layer on top of insulator. According to results, excessive flow rate of hydrogen when depositing thin films will form a lot of defects such as fine grains and voids in the films. The highest crystallization fraction of 69 % can be achieved, which was higher than industry standard 60%. The field effect mobility, ON/OFF ratio of proposed μc-Si thin-film transistor (TFT) were 0.98 cm2/V.s, 2.62?~107, respectively.
author2	Chiung-wei Lin
author_facet	Chiung-wei Lin Yao-Chang Tsai 蔡耀昌
author	Yao-Chang Tsai 蔡耀昌
spellingShingle	Yao-Chang Tsai 蔡耀昌 The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors
author_sort	Yao-Chang Tsai
title	The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors
title_short	The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors
title_full	The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors
title_fullStr	The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors
title_full_unstemmed	The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors
title_sort	development of low temperature microcrystalline silicon thin-film transistors
publishDate	2010
url	http://ndltd.ncl.edu.tw/handle/81939691447580776798
work_keys_str_mv	AT yaochangtsai thedevelopmentoflowtemperaturemicrocrystallinesiliconthinfilmtransistors AT càiyàochāng thedevelopmentoflowtemperaturemicrocrystallinesiliconthinfilmtransistors AT yaochangtsai dīwēnwēijīngxìbáomódiànjīngtǐkāifā AT càiyàochāng dīwēnwēijīngxìbáomódiànjīngtǐkāifā AT yaochangtsai developmentoflowtemperaturemicrocrystallinesiliconthinfilmtransistors AT càiyàochāng developmentoflowtemperaturemicrocrystallinesiliconthinfilmtransistors
_version_	1718230797460176896

The Development of Low Temperature Microcrystalline Silicon Thin-Film Transistors

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