A Study on Energy Consumption and Its Impact on Global Warming for 12-inch DRAM Fabs in Taiwan

• Main Authors: Hsien-Chou Chuang, 莊憲洲
• Other Authors: 胡石政
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/nqqzqz

碩士 === 國立臺北科技大學 === 能源與冷凍空調工程系碩士班 === 98 === The structure of industry sector in Taiwan focused on electronic industry primarily. However, electronic industry is an energy-intensive industry. For example, the annual growth rate of electricity consumption of other industry was 4~5%, the electronic industry was 30% in the past few years. The market-share of Taiwan DRAM fabs, majorly 300 mm Wafer fabs, was ranked top three in the world in 2007. As the “Kyoto Protocol” becomes effective, the global environment protection voice ebullient and the earth climatic change subject receives much attention. The objects of this thesis include two tasks. First, to elaborate the specific electric power uses of the four 300-mm DRAM fabs selected, and then compare them to their 300-mm, 200-mm, and 150-mm counterparts compiled from previous studies. Second, explore the influence of the energy consumption of these DRAM fabs on global warming. The first part of this thesis characterized electrical energy use for four major 300-mm DRAM wafer fabs in Taiwan, including energy use by overall fab, facility systems, and subsystems through field data collection and analysis. Energy performance and wafer production of the DRAM fabs making wafers of different sizes and different locations base upon additional data compiling and literature research, were compared. The average of the normalized electric power consumption in Taiwan’s 300-mm DRAM fabs in this study was 0.0272 kWh/UOP and 0.743 kWh/cm2-wafer area, meeting the International Technology Roadmap for Semiconductors (i.e., 0.8 kWh/cm2-wafer area in 2007), while the other 300-mm DRAM fabs worldwide that were surveyed by ISMI exhibited lower UOP values likely due to a combination of factors such as low capacity utilization. All the 300-mm DRAM fabs included in comparisons have exhibited significantly higher space utilization efficiency along with similarly higher power density, while demonstrating significantly higher energy efficiency in wafer production than their 150-mm or 200-mm predecessors. Moreover, embarking through the viewpoint of Life Cycle Assessment (LCA), by using the Simapro 5.0 software under Eco-indicator 95 impact patterns, the DRAM industry in manufacturing stage''s energy consumption to the global warming impact influence, greenhouse gas which - 1999 energy of its each unit wafer area (1/cm2) use produced 200mm wafer is 0.601 kg CO2, 2007 year 300mm wafer is 0.367 kg CO2, as to the “characterization” of the simulated result. Compared the data of 1999, the greenhouse gas emissions due to energy consumption of unit wafer area (1/cm2) reduces 0.234 kg of CO2 in 2007.