Study on Properties of One-Dimension Boron Nitride Nanomaterials Prepared by a Gas Condensation Technique

• Main Authors: Ying-Shiou Liu, 劉盈秀
• Other Authors: 蘇程裕
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/43765z

碩士 === 國立臺北科技大學 === 製造科技研究所 === 98 === In the present study, boron nitride materials were synthesized by a modified plasma arc gas condensation technique. The effects of the chamber pressures (200~600 torr), production time (20sec~3min), on the preparation of boron nitride nanostructures were investigated. The optical and field emission characteristics of boron nitride one-dimension boron nitride nanomaterials were also examined. Study found that as the chamber pressure reduction and production time increased, not only by the morphology of BN sheet has been transforming into an one-dimensional structure, and the one-dimensional structure of a number will gradually increase, length up to several hundred microns. X-ray diffraction results showed that the increase in generation time, began to emerge as the h-BN phase, lattice along the growth direction is (0002) face growth of crystals by HRTEM results reveal that spacing of 0.33nm, its growth mechanism is Vapor-Solid solidly (VS) the physiognomy explanation. The results showed that after purification of one-dimensional BN nanomaterials absorption wavelength of 256nm, close to the near ultraviolet region, the band gap is 4.84eV. Photolumeinscence emission at ultraviolet-visible (297nm、374nm) and the yellow (515~542nm) regions are luminous phenomenon produced. The turn-on field of BN one-dimensional nanomaterials is 4.49 V/μm. Therefore, this study uses synthetic gas condensate do not need to add in catalyst was successfully prepared under the conditions of one-dimensional BN nanomaterials, and the laboratory synthesis of one-dimensional BN nanomaterials both light and field emission characteristics, the future can be used for fluorescent materials, UV equipment, or field emission device applications.