| Summary: | 碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 98 === In this study,we successfully prepared CIGS absorber layers by multi-source thermal co-evaporation system,and we choose the Corning glass substrate, metal molybdenum back contact, CdS buffer layer, Window layers of Intrinsic-ZnO、ZnO doping aluminum and aluminum front contact to product CIGS thin film solar cell.
Copper, indium, galium, selenium, each element evaporation source are the independent, we put the granular element in the independent crucible and heating, used the saturated vapor pressure (close to its melting point) of each materials and control the CIGS thin films growth and it’s composition by each evaporation source activities shutter. Main chamber’s vacuum requirements ranging between 10-2 ~ 10 -6 torr.
We focus on CIGS thin films elemental composition ratio to research and investigate, try to change the elemental composition ratio to discuss the effect of crystal phase. General CIGS absorber layer will show a small amount of Cu-deficient phenomenon, about Cu / In + Ga ratio between 0.9 ~ 0.95, so in this study we change the copper evaporation source temperature from 1356 ℃ to 1376 ℃, 2 ℃ to do a change, will be Cu / In + Ga control from 0.58 to 0.92, observed crystalline phase structure by XRD。Totaly preparation process success simplify of the single stage of co-evaporation, preparation time is shortened to within 40 min, with a shorter preparation process more simple advantage.
After assessment, we choose appropriate range of parameters for production of CIGS solar cells and analyzed cell characteristics and conversion efficiency measurements, the successful conversion efficiency of 6.95% preparation of CIGS solar cells.
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