| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 98 === In this thesis, the main focus of my research is to demonstrate the optimized thickness of Au thin film in conjunction with the optimal electrode pattern to fabricate a high efficiency InP Schottky solar cell. The advantages of Schottky barriers solar cells contain (1) low-temperature processing because without high-temperature diffusion or annealing is required, (2) adaptability to thin-film solar cells, and (3) the simplicity and low-cost fabrication, and (4) reduce the effects of high recombination velocity near the surface because the presence of a depletion region right at the semiconductor surface.
The effect of metal thin film plays a significant role in Schottky barrier solar cell. We select Au thin film as the Schottky contact metal. As the Au film, the thickness of Au film was based on the analysis of sheet resistance and transparency. The optimized Au film will promote the device performance of Schottky barrier solar cell. The optimum thickness of Au thin film is 6.1 nm in this work.
Moreover, we design four grid patterns in this experimental using the results of Santanu Bandyopadhyay et al reported data [25]. The line width was 18 μm. The shadows are 9.33 %, 10.47 %, 11.06 % and 12.73 %, respectively, we discuss the effect of different grid patterns to Schottky solar cells.
It is significant to investigate back ohmic contact before fabricating Schottky solar cells. A low resistivity ohmic contact value was obtained by adopting transfer length method (TLM). The lowest specific contact resistivity (ρc) of AuZn/p-InP is 2.9×10-5 Ω-cm2 by employing rapid thermal annealing (RTA) at 430 °C for 2.5 min in N2 atmosphere.
In this thesis, we fabricate Schottky solar cells with the active area of 4.5×4.5 mm2 and deposit TiO2 of 59.2 nm as AR-coating. We utilize I-V measurement to obtain ideal factor, barrier height and series resistance. We apply Norde function method to gain barrier height and series resistance under the dark condition. Under the AM1.5G illumination condition (line width of 18 μm and shadow of 12.74 % grid pattern), the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF) and conversion efficiency (η) are 0.745 V, 17.2 mA/cm2, 71.26 %, and 10.46 %, respectively.
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