| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 98 === MnxZn1-xO has become an attractive material because of it’s ferromagnetic and optoelectronic properties. Here we demonstrate that MnZnO thin film can be synthesized via pulsed laser deposition (PLD) method and investigate it’s structural and optoelectronic properties.
The thesis consists of two parts. In the first part, the MnxZn1-xO (0.02≦x≦0.2) thin film was grown on c-plane sapphire substrate by PLD method directly. Measurements include scanning electron microscope (SEM), X-ray diffraction (XRD), optical transmission spectra, and atomic force microscopy (AFM).
In the second part, in attempt to improve crystalline properties of MnZnO, the ZnO thin film was grown on c-plane sapphire substrate before the growth of MnZnO. The SEM images reveal the thin film structure become rougher when x increase. The XRD shows that only (0002) peak exists and the peak moves to lower angle( lattice constants become larger) . The room-temperature photoluminescence (RTPL spectrum) showed that ultraviolet luminescence peak has blueshift with the increasing Mn composition, and full width at half maximum (FWHM) of PL spectrum became wider. Besides, this thesis showed the bandgap of MnZnO can be controlled with Mn composition and the RTPL of MnZnO was observed.
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