| Summary: | 碩士 === 國立臺北科技大學 === 化學工程研究所 === 98 === This paper stadies two major topics. The first part discuss the defect cause of aluminum wire Corrosion for TFT-LCD (Thin-film transistor liquid-crysral display); The other is that can be employed the method of equipment parameter to retard or inhibit the corrosion defect.
The following is the first major topic. We learned that aluminum wire corrosion is caused by poor design with aluminum components reduce the line width is narrowed, the flow through metal wires with high current density changes, while the role of atoms in the high current density produced under the migration, the phenomenon known as electromigration, thus leading to migration of aluminum ions generated holes.
The following is the second major topic. We found Gate Pad after cleaning process, the aluminum metal corrosion occurs, and the corrosion area will be expanded, so we have to adjust parameters by equipment cleaning power, temperature, and environmental conditions to solve the aluminum wire corrosion problems.Then, it used measuring instruments optical microscope, focused ion beam (FIB) and scanning electron microscope (SEM) to understand the causes of aluminum terminals corrosion, and observe the changes in corrosion.
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