A novel ESD design for 800v Ldmos with robustness
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 98 === ABSTRACT In the power management applications, the lateral double-diffusion MOS (LDMOS) transistor with high breakdown voltage has long been integrated monolithically in IC process. These power devices are often used as the output driver, and straightly connecte...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/27566161199134683994 |