| Summary: | 碩士 === 南台科技大學 === 光電工程系 === 98 === In this study, we used photolithography to fabricate aluminum layer with various surface patterns that can selectively induce crystallization of silicon, with the surface roughening treatment of transparent electrode, light can pass through amorphous silicon and poly-silicon and thus increase the light absorption range (380 nm ~ 1100 nm) in silicon thin film solar cells, leading to the enhancement in the power conversion efficiency. Tow circular diameters of 5 and 10 μm and two pitches of patterns of Al were used to yield 8 area coverage ratio of 12.6, 19.6, 25.6, 34.9, 65.9, 74.4, 80.6 and 87.6%. The thickness of Al film 25nm to 200nm, patterned aluminum were fabricated on both glass and ITO glass substrates and aluminum induced crystallization was conducted at 600 ℃, 1Pa thermal annealing environment.
Results showed that at α-Si/Al thickness ratio of 200 nm/25 nm silicon crystals can be formed on bare glass after annealing, with optimal crystallization of silicon at α-Si/Al thickness of 200 nm/100 nm. Whereas on ITO/glass α-Si/Al thickness ratio of 200 nm/50 nm silicon crystals can be observed. On bare glass with Si / Al thickness ratio of 200 nm/100 nm and aluminum area ratio from 74.4 to 87.4%, optical band gap of 1.2 eV was measured .
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