The Study of Electro-Anodization and Non oxide ofElectro-Plating on Porous Silicon
碩士 === 中國文化大學 === 材料科學與奈米科技研究所 === 98 === Abstract Semiconductor device manufacturing process. The resulting oxi de layer will lead to decrease yields and increase production costs . With the more sophisticated components, its oxide layer on their inf luence is even more evident. After the end of th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32531055595661574725 |