Study on the Preparation and Properties of Iron Oxide Nanowires

碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 98 === This study is to prepare iron oxide nanowires by chemical vapor deposition method. Taguchi method was used to find the optimal growth paramedics. In the process for the preparation of iron oxide nanowires , the iron substrate was first coated a film of e...

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Bibliographic Details
Main Authors: Kuan-hsun Lu, 盧冠勳
Other Authors: 劉偉隆
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/r8fnj7
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Summary:碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 98 === This study is to prepare iron oxide nanowires by chemical vapor deposition method. Taguchi method was used to find the optimal growth paramedics. In the process for the preparation of iron oxide nanowires , the iron substrate was first coated a film of electroless Co or Ni metal as catalyst, and them put into a growth furnace to grow iron oxide nannowires, under a growth atmosphere of water vapor, O2, CH4, and N2. The growth time was kept for 30 min. In Taguchi method, kinds of catalyst film, thicknesses of catalyst film, growth temperatures, flow rates of H2O(g), O2, and CH4, and temperatures of H2O(l) were selected as the parameters. The prepared iron oxide nanowires were observed and analyzed by using scanning electron microscope, energy dispersive spectroscopy, X-ray diffraction and vibrating sample magnetometer . The results showed that a relatively large quantity of iron oxide nanowires can be grown under condition of electroless Ni film coated for 180 seconds, growth temperatures of 650℃, O2, CH4, and H2O vapor with 100, 25, and 100 sccm respectively, and water temperature of 30℃. The iron oxide nanowires could not be grown at growth temperature of 850℃, because at this temperature O2 would react with CH4, therefore, there is no O2 residual for the growth of iron oxide nanowire.