| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 98 === In this dissertation, we present a study of titanium dioxide (TiO2) as active area and applied to the metal-semiconductor-metal (MSM) structure ultraviolet (UV) photodetectors (PDs) and thin-film transistors(TFTs). One part discusses the TiO2 with different working power, annealing were deposited onto glass substrates using radio frequency (rf) magnetron sputter deposition and the optimized condition was obtained. Additionally, we fabricated the silver electrodes of UV PDs with optimization of growth conditions of TiO2 and discusse the characteristic of the photoresponse as a function of annealing conditions. In order to improve performance, we use O2-plasma to improve dark current and photoresponse as the annealing process induced surface roughness. Two parts discusses that we demonstrate that TiO2 nanorod arrays were prepared on the pre-treated glass substrate by the chemical bath deposition (CBD) approach. The morphology and orientation of the obtained TiO2 nanorod arrays can be conveniently tailored by changing the reactants and experimental conditions, such as reaction temperature, concentration, growth time. Additionally, UV PDs with TiO2 nanorod arrays have been fabricated and characterized. Three parts, we fabricate bottom-gate structure using an anatase TiO2 film as an active channel layer grown by using rf-sputtering. The key factor to anneals of TiO2 active channel exhibit a clear n-type TFT behavior with a saturation mobility of 13.9 cm2/V．s and the on/off ratio is 1× 104.
|
|---|
