low temperature alumunum diffusion into a-Si:H layer and study of a-SiNx:H passivation layer

• Main Authors: Chun-yen Hsu, 徐俊硯
• Other Authors: Lu-sheng Hong
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/68109295768380016129

碩士 === 國立臺灣科技大學 === 化學工程系 === 98 === First part of this thesis fabricates p+ thin film by aluminum low temperature diffusion in amorphous silicon thin film. p+ thin film fabricated under different experimental parameters, such as diffusion temperature and diffusion time. The p+ thin film measured by Raman, IV, Hall and SIMS which showed the structure, conductivity, carrier concentration as well as Al profile in p+ thin film. As a results, the film showed microcrystalline structure when diffusion temperature was higher than 200℃. The conductivity and carrier concentration of p+ thin film followed by 12.2 Scm- 1 and 5.85×1020 cm- 3 . When diffusion temperature at 175 ℃ , the film showsed amorphous structure. The conductivity and carrier concentration of p+ thin film followed by 0.45 Scm- 1 and 4.58× 1014 cm- 3. Active energy of aluminum diffuse in a-Si:H is 0.688 eV. Second part of this thesis fabricates a-SiNx by nitrogen. The a-SiNx thin film fabricateed under different experimental parameters, such as N2 flow rate, deposition temperature and H2 flow rate. The a-SiNx thin film was measured by XPS, FTIR, and Sinton which showed the N/Si ratio, bonding properties and carrier lifetime. Results showed that N2 flow rate, deposition temperature and H2 flow rate follow by 40 sccm, 400℃ and 10 sccm had best carrier lifetime which was 1115 µs. Third part of this thesis fabricated low temperature diffusion solar cell. According to different sequence of thin film layers deposited and aluminum layer deposited that we could use Sinton measurement to know the implied Voc. The best result reached 687 mV.