| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 98 === First part of this thesis fabricates p+ thin film by
aluminum low temperature diffusion in amorphous silicon thin
film. p+ thin film fabricated under different experimental
parameters, such as diffusion temperature and diffusion time.
The p+ thin film measured by Raman, IV, Hall and SIMS which
showed the structure, conductivity, carrier concentration as
well as Al profile in p+ thin film. As a results, the film showed
microcrystalline structure when diffusion temperature was
higher than 200℃. The conductivity and carrier concentration
of p+ thin film followed by 12.2 Scm- 1 and 5.85×1020 cm- 3 .
When diffusion temperature at 175 ℃ , the film showsed
amorphous structure. The conductivity and carrier
concentration of p+ thin film followed by 0.45 Scm- 1 and 4.58×
1014 cm- 3. Active energy of aluminum diffuse in a-Si:H is 0.688
eV.
Second part of this thesis fabricates a-SiNx by nitrogen.
The a-SiNx thin film fabricateed under different experimental
parameters, such as N2 flow rate, deposition temperature and
H2 flow rate. The a-SiNx thin film was measured by XPS, FTIR,
and Sinton which showed the N/Si ratio, bonding properties
and carrier lifetime. Results showed that N2 flow rate,
deposition temperature and H2 flow rate follow by 40 sccm,
400℃ and 10 sccm had best carrier lifetime which was 1115
µs.
Third part of this thesis fabricated low temperature
diffusion solar cell. According to different sequence of thin
film layers deposited and aluminum layer deposited that we
could use Sinton measurement to know the implied Voc. The
best result reached 687 mV.
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