Coupling Efficiency Study on Silicon Wire Interface

碩士 === 國立臺灣科技大學 === 光電工程研究所 === 98 === A silicon-on-insulator platform is extensively utilized for both of low power consumption high-speed microelectronic and highly integrated photonic devices due to its fully compatible processing with the complementary metal-oxide-semiconductor (CMOS) standard p...

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Main Authors: Yi-Liang Lin, 林奕良
Other Authors: Shih-Hsiang Hsu
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/25976571568241648747
id ndltd-TW-098NTUS5124127
record_format oai_dc
spelling ndltd-TW-098NTUS51241272016-04-22T04:23:47Z http://ndltd.ncl.edu.tw/handle/25976571568241648747 Coupling Efficiency Study on Silicon Wire Interface 矽線波導耦光效率之研究 Yi-Liang Lin 林奕良 碩士 國立臺灣科技大學 光電工程研究所 98 A silicon-on-insulator platform is extensively utilized for both of low power consumption high-speed microelectronic and highly integrated photonic devices due to its fully compatible processing with the complementary metal-oxide-semiconductor (CMOS) standard process. Moreover, the large refractive-index difference between silicon and silicon dioxide layers can significantly reduce the device size to form the silicon wire waveguides for submicron silicon photonics applications. The current challenge for submicron silicon photonics mainly comes from the mode mismatch caused poor coupling efficiency between the silicon wire and traditional optical fiber. In this thesis, nanotaper and grating coupler were comprehensively studied and simulated to demonstrate the possibility for optical interconnection. Nanotaper simulation illustrated that both effective index and mode size of silicon wires are changing with the waveguide geometry using beam propagation method (BPM) and finite-difference time-domain (FDTD) methods. The polarization dependent loss of the silicon wire would be minimized and achieved 50.8% (-2.94dB) coupling efficiency at the width of 0.4 μm and height of 0.26 μm when the taper length and tip width were taken as 40 μm and 0.11 μm, respectively. The phase match conditions were theoretically and experimentally applied to demonstrate the grating coupling efficiency with the vertical and oblique incident angles. The oblique incident grating was utilized to avoid the second order diffraction and increase directionality in the silicon wire. The TE polarization from 2-D FDTD method was taken to simulate the coupling efficiency for vertical and oblique grating coupler as 46% (-3.37dB) and 29.25% (-5.34dB), respectively. The experimental data were showing a high coupling loss of 38.8 dB, which mainly came from the contaminated rough surface scattering and over-etched grating teeth. Shih-Hsiang Hsu 徐世祥 2010 學位論文 ; thesis 100 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺灣科技大學 === 光電工程研究所 === 98 === A silicon-on-insulator platform is extensively utilized for both of low power consumption high-speed microelectronic and highly integrated photonic devices due to its fully compatible processing with the complementary metal-oxide-semiconductor (CMOS) standard process. Moreover, the large refractive-index difference between silicon and silicon dioxide layers can significantly reduce the device size to form the silicon wire waveguides for submicron silicon photonics applications. The current challenge for submicron silicon photonics mainly comes from the mode mismatch caused poor coupling efficiency between the silicon wire and traditional optical fiber. In this thesis, nanotaper and grating coupler were comprehensively studied and simulated to demonstrate the possibility for optical interconnection. Nanotaper simulation illustrated that both effective index and mode size of silicon wires are changing with the waveguide geometry using beam propagation method (BPM) and finite-difference time-domain (FDTD) methods. The polarization dependent loss of the silicon wire would be minimized and achieved 50.8% (-2.94dB) coupling efficiency at the width of 0.4 μm and height of 0.26 μm when the taper length and tip width were taken as 40 μm and 0.11 μm, respectively. The phase match conditions were theoretically and experimentally applied to demonstrate the grating coupling efficiency with the vertical and oblique incident angles. The oblique incident grating was utilized to avoid the second order diffraction and increase directionality in the silicon wire. The TE polarization from 2-D FDTD method was taken to simulate the coupling efficiency for vertical and oblique grating coupler as 46% (-3.37dB) and 29.25% (-5.34dB), respectively. The experimental data were showing a high coupling loss of 38.8 dB, which mainly came from the contaminated rough surface scattering and over-etched grating teeth.
author2 Shih-Hsiang Hsu
author_facet Shih-Hsiang Hsu
Yi-Liang Lin
林奕良
author Yi-Liang Lin
林奕良
spellingShingle Yi-Liang Lin
林奕良
Coupling Efficiency Study on Silicon Wire Interface
author_sort Yi-Liang Lin
title Coupling Efficiency Study on Silicon Wire Interface
title_short Coupling Efficiency Study on Silicon Wire Interface
title_full Coupling Efficiency Study on Silicon Wire Interface
title_fullStr Coupling Efficiency Study on Silicon Wire Interface
title_full_unstemmed Coupling Efficiency Study on Silicon Wire Interface
title_sort coupling efficiency study on silicon wire interface
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/25976571568241648747
work_keys_str_mv AT yilianglin couplingefficiencystudyonsiliconwireinterface
AT línyìliáng couplingefficiencystudyonsiliconwireinterface
AT yilianglin xìxiànbōdǎoǒuguāngxiàolǜzhīyánjiū
AT línyìliáng xìxiànbōdǎoǒuguāngxiàolǜzhīyánjiū
_version_ 1718231105313701888