Preparation and characterizations of Sputtered Amorphous HoScO3 Film on Pt and Cu-based Electrodes
碩士 === 國立臺灣科技大學 === 工程技術研究所 === 98 === 200-nm-thick HoScO3 films fabricated by magnetron sputtering on the Pt/Ti/SiO2/Si, Cu(ReNx)/Ti/SiO2/Si and Cu(RuN¬x)/TaN/SiO2/Si stack structures have been characterized. The effect of post-annealing on the microstructures and electrical properties are studied....
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/40034132969852795154 |
| Summary: | 碩士 === 國立臺灣科技大學 === 工程技術研究所 === 98 === 200-nm-thick HoScO3 films fabricated by magnetron sputtering on the Pt/Ti/SiO2/Si, Cu(ReNx)/Ti/SiO2/Si and Cu(RuN¬x)/TaN/SiO2/Si stack structures have been characterized. The effect of post-annealing on the microstructures and electrical properties are studied. X-ray results show the amorphous state in the film at various temperature up to 873 K. The SEM and SIMS results clearly show the interaction between HoScO3 film and Pt electrode after annealing at 873 K. Dielectric constant exhibits no dependence of electric field. It reaches to a maximum value of 51.3 after annealing at 773 K and has a noticeable drop to 27.3 as the annealing temperature reaches to 873 K. The decrease in dielectric constant is probably due to the TiO2 formation between HoScO3 film and Pt bottom electrode observed by TEM results. The leakage current mechanism is dominated by Poole-Frankel emission. In addition, the HoScO3 films deposited on the Cu(ReNx)/Ti/SiO2/Si and Cu(RuN¬x)/TaN/SiO2/Si stack structures have been investigated for the thermal stability of stack structures at various annealing temperatures. However, the results of the annealed samples are not obtainable since the films peel off from the bottom electrode [Cu(ReNx)] and buffer layer of TaN once the annealing temperature increases.
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