| Summary: | 碩士 === 國立臺灣科技大學 === 工程技術研究所 === 98 === Zinc selenide(ZnSe), as a II-VI semiconductor with a band gap energy of 2.7 eV, has received much attention due to its excellent properties, such as large band-gap energy, direct recombination and resistance to a high electric field. Zinc selenide is one of the most important materials in electro-optics with a wide range of applications, including optical devices, LEDs, flat panel displays, sensors, and solar cells etc.
ZnSe nanowires have been synthesized through a vapor phase reaction of zinc and selenium powders on a (100) silicon substrate coated with gold catalysts. Spin-coated alumina oxide films on Si substrates were used to disperse the gold catalysts and to prevent gold catalysts from clustering as the catalyst films underwent an annealing process. By controlling the size of catalysts, the size of ZnSe nanowires is reduced .
ZnSe nanowires were synthesized with the substrates temperature at 800 oC, the zinc source at 800 oC, and the selenium source at 630oC. The characteristics and optical properties of the ZnSe nanowires were analyzed by XRD, SEM, TEM, and PL spectra. From PL spectra, the ZnS nanowires have a strong green emission band with PL band position centered at about 523nm.
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