Preparation and analysis of sputtered Cu2ZnSnSe4 thin films solar cells

• Main Authors: Hsien-Pen Wu, 吳先本
• Other Authors: Dong-Hau Kuo
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/46499687343351980233

碩士 === 國立臺灣科技大學 === 工程技術研究所 === 98 === Due to energy crisis, the research of solar cells is recently much more attractive. The main compound thin film solar cell is the Cu(In,Ga)Se2 system, but the high cost has limited its further applications. Lowing the cost with the finding of new materials is necessary, therefore Cu2ZnSnS4(CZTS) and Cu2ZnSnSe4 (CZTSe) solar cells with energy band gaps of 1.5 eV and 0.9-1.07eV, respectively, are developed. In this study, the effects of the target composition and substrate temperature on the performance of sputtered Cu2ZnSnSe4 thin film were evaluated. The physical characteristics of the Cu2ZnSnSe4 thin film were investigated by X-Ray Diffraction(XRD), Field Emission-Scanning Electron Microscope(FE-SEM), and Energy Dispersive Spectrometer(EDS) . Hall measurement and Photoluminescence were used for the electrical and optical properties, respectively. The experimental results shows that the sputtered Cu2ZnSnSe4 thin films deposited at 400℃ have better performance. At this condition, the films are p-type, well crystallized with a large grain size of several hundred nm, and a direct energy gap of 0.9-1.08 eV and have an absorption coefficient of 104-105 cm-1 before and after annealing, a carrier concentration of 1020-1021cm-3, and the highest carrier mobility of 10 cm2V-1s-1. Finally, CZTSe solar cell devices were built and its efficiency was measured. Due to the complicated steps for preparation, the performance of CZTSe solar cell devices needs to be improved.