A High Signal to Noise Ratio Sensing Circuit for CMOS-MEMS Gyroscope Design
碩士 === 臺灣大學 === 機械工程學研究所 === 98 === A z-axis dual-mass CMOS-MEMS gyroscope with high signal to noise ratio capacitance sensing circuit has been designed in this research. A gyroscope chip which implemented by the TSMC 2P4M 0.35 μm CMOS-MEMS process is proposed in this design. First, the post process...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34553499876873088026 |