Development of Phase Change Random Access Memory SPICE Model and Physical Mechanism of Resistive Random Access Memory and Analysis of Effect of Extreme Ultra Violet on Heterojunction Bipolar Transistors
碩士 === 臺灣大學 === 電子工程學研究所 === 98 === In this thesis, the first chapter is to research the EUV effect on HBTs, the device under test is a test-key made by TSMC, and irradiated with EUV at NSRRC. The DC measurement is conducted at NTU, and the AC S-parameter is measured at NDL. The results show the EUV...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26595726550050075005 |