Studies on the properties of GaAsSbN/GaAs p-i-n devices
碩士 === 臺灣大學 === 電子工程學研究所 === 98 === We study the fabrication and the properties of GaAs/GaAs0.97Sb0.02N0.01 heterjunction diodes deposited on GaAs. The energy gap of the GaAs0.97Sb0.02N0.01 layer is 1.17 eV. We found that all the forward currents are higher than the expected p/n junction diffusion c...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16091153464659436432 |